Low-Temperature Crystallization Enables 21.9% Efficient Single-Crystal MAPbI<sub>3</sub> Inverted Perovskite Solar Cells

Abdullah Y. Alsalloum(King Abdullah University of Science and Technology), Bekir Türedi(King Abdullah University of Science and Technology), Xiaopeng Zheng(King Abdullah University of Science and Technology), Somak Mitra(King Abdullah University of Science and Technology), Ayan A. Zhumekenov(King Abdullah University of Science and Technology), Kwang Jae Lee(King Abdullah University of Science and Technology), Partha Maity(King Abdullah University of Science and Technology), Issam Gereige(Saudi Aramco (Saudi Arabia)), Ahmed AlSaggaf(Saudi Aramco (Saudi Arabia)), Iman S. Roqan(King Abdullah University of Science and Technology), Omar F. Mohammed(King Abdullah University of Science and Technology), Osman M. Bakr(King Abdullah University of Science and Technology)
ACS Energy Letters
January 27, 2020
Cited by 274

Abstract

Lead halide perovskite solar cells (PSCs) have advanced rapidly in performance over the past decade. Single-crystal PSCs based on micrometers-thick grain-boundary-free films with long charge carrier diffusion lengths and enhanced light absorption (relative to polycrystalline films) have recently emerged as candidates for advancing PSCs further toward their theoretical limit. To date, the preferred method to grow MAPbI3 single-crystal films for PSCs involves solution processing at temperatures ≳120 °C, which adversely affects the films’ crystalline quality, especially at the surface, primarily because of methylammonium iodide loss at such high temperatures. Here we devise a solvent-engineering approach to reduce the crystallization temperature of MAPbI3 single-crystal films (<90 °C), yielding better quality films with longer carrier lifetimes. Single-crystal MAPbI3 inverted PSCs fabricated with this strategy show markedly enhanced open-circuit voltages (1.15 V vs 1.08 V for controls), leading to power conversion efficiencies of up to 21.9%, which are among the highest reported for MAPbI3-based devices.


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