Ayan A. Zhumekenov

State-of-the-art perovskite solar cells with record efficiencies were achieved by replacing methylammonium (MA) with formamidinium (FA) in perovskite polycrystalline films. However, these films suffer from severe structural disorder and high density of traps; thus, the intrinsic properties of FA-based perovskites remain obscured. Here we report the detailed optical and electrical properties of FAPbX3 (where X = Br– and I–) single crystals. FAPbX3 crystals exhibited markedly enhanced transport compared not just to FAPbX3 polycrystalline films but also, surprisingly, to MAPbX3 single crystals. Particularly, FAPbBr3 crystals displayed a 5-fold longer carrier lifetime and 10-fold lower dark carrier concentration than those of MAPbBr3 single crystals. We report long carrier diffusion lengths—much longer than previously thought—of 6.6 μm for FAPbI3 and 19.0 μm for FAPbBr3 crystals, the latter being one of the longest reported values in perovskite materials. These findings are of great importance for future integrated applications of these perovskites.

So-called zero-dimensional perovskites, such as Cs4PbBr6, promise outstanding emissive properties. However, Cs4PbBr6 is mostly prepared by melting of precursors that usually leads to a coformation of undesired phases. Here, we report a simple low-temperature solution-processed synthesis of pure Cs4PbBr6 with remarkable emission properties. We found that pure Cs4PbBr6 in solid form exhibits a 45% photoluminescence quantum yield (PLQY), in contrast to its three-dimensional counterpart, CsPbBr3, which exhibits more than 2 orders of magnitude lower PLQY. Such a PLQY of Cs4PbBr6 is significantly higher than that of other solid forms of lower-dimensional metal halide perovskite derivatives and perovskite nanocrystals. We attribute this dramatic increase in PL to the high exciton binding energy, which we estimate to be ∼353 meV, likely induced by the unique Bergerhoff–Schmitz–Dumont-type crystal structure of Cs4PbBr6, in which metal-halide-comprised octahedra are spatially confined. Our findings bring this class of perovskite derivatives to the forefront of color-converting and light-emitting applications.

A rapid, low-temperature, and solution-based route is developed for growing large-sized cesium lead halide perovskite single crystals under ambient conditions. An ultralow minority carrier concentration was measured in CsPbBr3 (≈108 holes per cm3, much lower than in any other lead halide perovskite and crystalline silicon), which enables to realize self-powered photodetectors with a high ON/OFF ratio (105). As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

Lead halide perovskite solar cells (PSCs) have advanced rapidly in performance over the past decade. Single-crystal PSCs based on micrometers-thick grain-boundary-free films with long charge carrier diffusion lengths and enhanced light absorption (relative to polycrystalline films) have recently emerged as candidates for advancing PSCs further toward their theoretical limit. To date, the preferred method to grow MAPbI3 single-crystal films for PSCs involves solution processing at temperatures ≳120 °C, which adversely affects the films’ crystalline quality, especially at the surface, primarily because of methylammonium iodide loss at such high temperatures. Here we devise a solvent-engineering approach to reduce the crystallization temperature of MAPbI3 single-crystal films (<90 °C), yielding better quality films with longer carrier lifetimes. Single-crystal MAPbI3 inverted PSCs fabricated with this strategy show markedly enhanced open-circuit voltages (1.15 V vs 1.08 V for controls), leading to power conversion efficiencies of up to 21.9%, which are among the highest reported for MAPbI3-based devices.