Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers
E. Giulotto(University of Pavia), Marco Felici(Sapienza University of Rome), S. Rubini(AREA Science Park), Giorgio Pettinari(Istituto di Fotonica e Nanotecnologie), M. Capizzi(Sapienza University of Rome), A. Polimeni(Sapienza University of Rome), M. Patrini(University of Pavia), G. Guizzetti(University of Pavia), M. Geddo(University of Parma), Mayank Sharma(Sapienza University of Rome)
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