Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
Jianguo Zhu(Guizhou Provincial People's Hospital), I. N. Krivorotov(University of California, Irvine), Zheng Duan(University of California, Irvine), Pramey Upadhyaya(Purdue University West Lafayette), Graham E. Rowlands(University of California, Irvine), J. A. Katine(Western Digital (United States)), Yu‐Jin Chen(University of California, Irvine), Juan G. Alzate(University of California, Los Angeles), Kang L. Wang(Chinese Academy of Sciences), Pedram Khalili Amiri(Northwestern University)
Cited by 268
Related Papers
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
|Nature Nanotechnology|2014|1k
Interface-induced phenomena in magnetism
|Reviews of Modern Physics|2017|902
Low-power non-volatile spintronic memory: STT-RAM and beyond
|Journal of Physics D Applied Physics|2013|544
Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry
|Nano Letters|2016|338
Room-Temperature Skyrmion Shift Device for Memory Application
|Nano Letters|2016|334