In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity
Ranran Zhuo(Zhengzhou University), Yuen Hong Tsang(Hong Kong Polytechnic University), Longhui Zeng(Zhengzhou University), Zhifeng Shi(Ministry of Education), Di Wu(Zhengzhou University), Yuange Wang(Zhengzhou University), Huiyu Yuan(Zhengzhou University), Tingting Xu(Fujian Medical University), Xinjian Li(Zhengzhou University), Yongtao Tian(Zhengzhou University)
Cited by 255
Related Papers
Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe<sub>2</sub>/Germanium Heterojunction
|ACS Nano|2019|633
Low‐Dimensional Metal Halide Perovskite Photodetectors
|Advanced Materials|2020|566
Ultrabroadband and High-Detectivity Photodetector Based on WS<sub>2</sub>/Ge Heterojunction through Defect Engineering and Interface Passivation
|ACS Nano|2021|482