Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe<sub>2</sub>/Germanium HeterojunctionDi Wu, Jiansheng Jie, Jia–Wen Guo et al.|ACS Nano|2019Cited by 633
Ultrabroadband and High-Detectivity Photodetector Based on WS<sub>2</sub>/Ge Heterojunction through Defect Engineering and Interface PassivationDi Wu, Jiansheng Jie, Chongxin Shan et al.|ACS Nano|2021Cited by 482
Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetectionDi Wu, Jiansheng Jie, Chenguang Guo et al.|Light Science & Applications|2023Cited by 365
In Situ Fabrication of 2D WS<sub>2</sub>/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-InfraredEnping Wu, Xinjian Li, Di Wu et al.|ACS Photonics|2019Cited by 351
<i>In Situ</i> Fabrication of PdSe<sub>2</sub>/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic RatioDi Wu, Jiansheng Jie, Mengmeng Xu et al.|ACS Nano|2022Cited by 318