Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction

Xiaohua Liu(Chinese Academy of Sciences), Xianlin Dong(Chinese Academy of Sciences), Dayu Zhou(University of Electronic Science and Technology of China), Fei Cao(Amherst College), Shuaidong Li(Dalian University of Technology), Yan Guan(Dalian University of Technology)
Acta Materialia
May 16, 2018
10.1016/j.actamat.2018.05.033
Cited by 61

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