Hard x-ray photoemission study of the temperature-induced valence transition system<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>EuNi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi>Si</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mo>)</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Katsuya Ichiki(Osaka Prefecture University), M. Taniguchi(Kyoto University), H. Anzai(Hiroshima University), Takayuki Uozumi(Osaka Prefecture University), Yuki Utsumi(Hiroshima University), H. Wada(Kyushu University), K. Shimada(Hiroshima University), Akihiro Mitsuda(Kyushu University), Shigenori Ueda(National Institute for Materials Science), Kojiro Mimura(Hiroshima University), Hitoshi Sato(Hiroshima University), Y. Taguchi(Osaka Prefecture University), H. Namatame(Hiroshima University)
Physical review. B./Physical review. B
July 7, 2017
Cited by 14


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