Hard x-ray photoemission study of the temperature-induced valence transition system<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>EuNi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi>Si</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mo>)</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>Katsuya Ichiki, M. Taniguchi, Shigenori Ueda et al.|Physical review. B./Physical review. B|2017Cited by 14
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