Deposition of device quality, low <i>H</i> content amorphous silicon
A. H. Mahan(National Laboratory of the Rockies), J. J. Carapella(National Laboratory of the Rockies), B. P. Nelson(National Laboratory of the Rockies), Richard S. Crandall(National Laboratory of the Rockies), I. Balberg(Hebrew University of Jerusalem)
Cited by 481
Abstract
Device-quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.