Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

Abstract

We study the magnitude of metastable light-induced changes in undoped hydrogenated amorphous silicon (the Staebler-Wronski effect) with electron-spin-resonance and photoconductivity measurements. The influence of the following parameters is investigated in a systematic way: sample thickness, impurity content, illumination time, light intensity, photon energy, and illumination and annealing temperatures. The experimental results can be explained quantitatively by a model based on the nonradiative recombination of photoexcited carriers as the defect-creating step. In the framework of this model, the Staebler-Wronski effect is an intrinsic, self-limiting bulk process, characterized by a strongly sublinear dependence on the total light exposure of a sample. The experimental results suggest that the metastable changes are caused by recombination-induced breaking of weak Si--Si bonds, rather than by trapping of excess carriers in already existing defects. Hydrogen could be involved in the microscopic mechanism as a stabilizing element. The main metastable defect created by prolonged illumination is the silicon dangling bond. An analysis of the annealing behavior shows that a broad distribution of metastable dangling bonds exists, characterized by a variation of the energy barrier separating the metastable state from the stable ground state between 0.9 and 1.3 eV.