Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
G. Timp(University of Notre Dame), B. E. Weir(AT&T (United States)), J. Sapjeta, M.I. O'Malley, H.-J. Gossmann, F. Klemens(Brookhaven National Laboratory), A. Komblit, Wang Tai, J.T.-C. Lee, J. M. Rosamilia, R. N. Kleiman(McMaster University), M. Green, D. C. Jacobson(AT&T (United States)), W Mansfield(AT&T (United States)), S. Moccio, A. Murrell(Applied Materials (United Kingdom)), T. Sorsch, D. M. Tennant(University of Tennessee at Knoxville), Aditya Agarwal, S.J. Hillenius, M.A. Foad(Applied Materials (United Kingdom)), F.H. Baumann, Mike Buonanno, H.-H. Vuong, P. J. Silvėrman, Justin B. Jackson(Eaton (United States)), T. Boone(Amgen (United States)), Vincent M. Donnelly(University of Houston), Raymond A. Cirelli
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