Room temperature 0.1 μm CMOS technology with 11.8 ps gate delay
K.F. Lee(AT&T (United States)), A. Ourmazd(University of Wisconsin–Milwaukee), E.H. Westerwick(AT&T (United States)), Y.O. Kim(AT&T (United States)), Ran Yan(King's College London), Behzad Razavi(University of California, Los Angeles), M. Tarsia(AT&T (United States)), D. M. Tennant(University of Tennessee at Knoxville), Dae‐Young Jeon(AT&T (United States)), M. Cerullo(AT&T (United States)), H.-D. Lin, M.D. Morris(Brooke Army Medical Center), Y. G. Wey(AT&T (United States)), R.G. Swartz(AT&T (United States)), T.M. Liu(AT&T (United States)), G.M. Chin(AT&T (United States)), Wayne Johnson(University of Utah)
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