Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors
A. Reygenson(Nokia (United States)), M. Haner(AT&T (United States)), D. Ritter(AT&T (United States)), R. A. Hamm(AT&T (United States)), R.D. Yadvish(AT&T (United States)), O.A. Menin(AT&T (United States)), P. R. Smith(AT&T (United States)), R.K. Montgomery(AT&T (United States))
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