Progress toward 10 nm CMOS devices
G. Timp(University of Notre Dame), B. E. Weir(AT&T (United States)), J. Sapjeta, M.I. O'Malley, H.-J. Gossmann, K.K. Bourdelle, F. Klemens(Brookhaven National Laboratory), J. M. Rosamilia, R. N. Kleiman(McMaster University), K. Evans‐Lutterodt(Massachusetts Institute of Technology), D. C. Jacobson(AT&T (United States)), S. Moccio, D. Muller, W Mansfield(AT&T (United States)), D. M. Tennant(University of Tennessee at Knoxville), M. Green, A. Kornlit, F.H. Baumann, Y. Kim, Winston Timp(Johns Hopkins University), J. P. Garno, A. Ghetti, I.E. Ocola, C. Lochstampfor, J. E. Bower, P. J. Silvėrman, T. Boone(Amgen (United States)), T. Sorsch, Raymond A. Cirelli
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