Evidence of extreme type-III band offset at buried<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mtext>CdO</mml:mtext><mml:mo>/</mml:mo><mml:mi>p</mml:mi></mml:math>-type SnTe interfaces
Matthew J. Wahila(Binghamton University), Louis F. J. Piper(University of Warwick), W. Walukiewicz(Lawrence Berkeley National Laboratory), Nicholas F. Quackenbush(Binghamton University), Jing Guo(University of Science and Technology of China), Per‐Anders Glans(Lawrence Berkeley National Laboratory), Zachary W. Lebens-Higgins(Binghamton University), K. M. Yu(Lawrence Berkeley National Laboratory), Junichi Nishitani(Lawrence Berkeley National Laboratory), J. C. Woicik(National Institute of Standards and Technology)
Cited by 7
Related Papers
Ballistic carbon nanotube field-effect transistors
|Nature|2003|3.2k
One-Dimensional Electrical Contact to a Two-Dimensional Material
|Science|2013|3.1k
Atomically thin p–n junctions with van der Waals heterointerfaces
|Nature Nanotechnology|2014|2.3k
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
|Science|2009|2.2k
Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
|Physical Review Letters|2008|1.5k