Quantum dots-templated growth of strain-relaxed GaN on a <i>c</i> -plane sapphire by radio-frequency molecular beam epitaxy
Haomin Guo, Yuqi Wang(Harbin Institute of Technology), Long Wen(Jinan University), Xinhua Li(China Machine Press), Shaojiang Bu, Zhifei Zhao
Cited by 1
Related Papers
Monolayer PtSe<sub>2</sub>, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
|Nano Letters|2015|692
Body-mass index and obesity in urban and rural China: findings from consecutive nationally representative surveys during 2004–18
|The Lancet|2021|579
Antagonism of Two Plant-Growth Promoting Bacillus velezensis Isolates Against Ralstonia solanacearum and Fusarium oxysporum
|Scientific Reports|2018|368
Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection
|Light Science & Applications|2023|365