Graphene: Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design (Adv. Mater. 5/2016)
Hyung‐Youl Park(Sungkyunkwan University), Jin‐Hong Park(LG (United States)), Byungha Shin(Korea Advanced Institute of Science and Technology), Woo‐Shik Jung(Stanford University), Jaeho Jeon(Sungkyunkwan University), Yongkook Park(Sungkyunkwan University), Gwangwe Yoo(Sungkyunkwan University), Sungjoo Lee(Tohoku University), Jae-Ho Lee(Samsung (South Korea)), Jinhee Lee(Samsung (South Korea)), Dong‐Ho Kang(Sungkyunkwan University), Yun Hee Jang(Daegu Gyeongbuk Institute of Science and Technology), Seongjun Park(Korea Advanced Institute of Science and Technology), Hyun‐Yong Yu(Korea University)
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