Simulation of 50-nm Gate Graphene Nanoribbon TransistorsCedric Nanmeni Bondja(Technische Universität Ilmenau), Frank Schwierz(Technische Universität Ilmenau)ElectronicsJanuary 12, 201610.3390/electronics5010003Cited by 42SaveCiteExport RISWatch citationsRelated PapersMolybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation|Nature Electronics|2022|177