Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Pengfei Luo(Hunan University), Xingqiang Liu(Wuhan University), Chao Ma(Chinese Academy of Sciences), Lei Liao(University of California, Los Angeles), Yawei Lv(Hunan University), Wenjing Qin(Hunan University), Frank Schwierz(Technische Universität Ilmenau), Xuming Zou(Wuhan University), Chang Liu(Hunan University), Yuan Liu(Hunan University), Jun He(China University of Geosciences), Jun Lin(Hunan University), Wujun Zhang(Hunan University), Xinpei Duan(Hunan University)
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