Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Pengfei Luo(Hunan University), Xingqiang Liu(Wuhan University), Chao Ma(Chinese Academy of Sciences), Lei Liao(Hunan University), Yawei Lv(Hunan University), Wenjing Qin(China Building Materials Academy), Frank Schwierz(Technische Universität Ilmenau), Xuming Zou(Wuhan University), Chang Liu(Tianjin University), Yuan Liu(Guangzhou University of Chinese Medicine), Jun He(Guangdong University of Technology), Jun Lin(Hunan University), Wujun Zhang(Hunan University), Xinpei Duan(Hunan University)
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