Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiCNils Weimann, D. M. Tennant(University of Tennessee at Knoxville), S. Chakraborty(Michigan State University), Michael J. ManfraIEEE Electron Device LettersDecember 1, 200210.1109/led.2002.806298Cited by 13SaveCiteExport RISWatch citationsRelated PapersProximate Kitaev quantum spin liquid behaviour in a honeycomb magnet|Unknown|2016|863Neutron scattering in the proximate quantum spin liquid α-RuCl <sub>3</sub>|Science|2017|724Quantum Criticality in an Ising Chain: Experimental Evidence for Emergent E <sub>8</sub> Symmetry|Science|2010|722Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>?) Noise|Physical Review Letters|1984|711Dirac Strings and Magnetic Monopoles in the Spin Ice Dy <sub>2</sub> Ti <sub>2</sub> O <sub>7</sub>|Science|2009|607