Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications
F. Ren(University of Florida), Chunming Wen(HRL Laboratories (United States)), Douglas J. Resnick(The Ohio State University), B.M. Paine(HRL Laboratories (United States)), C.S. Wu(HRL Laboratories (United States)), D. M. Tennant(University of Tennessee at Knoxville), S. J. Pearton(University of Florida), Ming Hu(Wuhan University of Science and Technology), C. R. Abernathy(University of Florida), D. C. Wang(HRL Laboratories (United States)), C.K. Pao(HRL Laboratories (United States)), R. F. Kopf
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
November 1, 1992
Cited by 12
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