The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures
L. Seravalli(Institute of Materials for Electronics and Magnetism), G. Guizzetti(University of Pavia), Giovanna Trevisi(Institute of Materials for Electronics and Magnetism), S. Franchi(Institute of Materials for Electronics and Magnetism), P. Frigeri(Institute of Materials for Electronics and Magnetism), M. Geddo(University of Parma)
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