Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates
Moonju Cho(IMEC), Jongho Lee(Seoul National University), Cheol Seong Hwang(Seoul National University), Jong‐Cheol Lee(Sungkyunkwan University), Hong Bae Park(Seoul National University), Kwang Soo Hyun, Jaehack Jeong, Young-Wuk Kim(Samsung (South Korea)), Jaehoo Park(Seoul National University), Hee-Sung Kang(Samsung (South Korea)), S.-J. Oh(Seoul National University)
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