CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
K.G. Anil(IMEC), S. Biesemans(IMEC), Abhisek Dixit(IMEC), Werner Boullart(IMEC), G. Mannaert(IMEC), S. Locorotondo(IMEC), M. Jurczak(IMEC), A. Lauwers(IMEC), Rita Vos(IMEC), S. Brus(IMEC), Yong Sik Yim(Samsung (United States)), Nadine Collaert(IMEC), P. P. Absil(IMEC), B. Kaczer(IMEC), Peter Verheyen(IMEC), Mark van Dal(Philips (United States)), A. Veloso(IMEC), J. A. Kittl(IMEC), S. Beckx(IMEC), Stefan Kubicek(Austrian Academy of Sciences), B. Degroote(IMEC), M. W. Goodwin(Texas Instruments (United States)), R. Rooyackers(IMEC), James Snow(IMEC), Olivier Richard(IMEC), K. De Meyer(IMEC), Xiaodong Shi(Beijing Anding Hospital)
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