Temperature dependence of hot-carrier degradation in silicon-on-insulator dynamic threshold voltage MOS transistors
Jae-Ki Lee(Korea Electrotechnology Research Institute), Jong‐Tae Park(Flex (United States)), Chong-Gun Yu(Incheon National University), Nag-Jong Choi(Incheon National University), J.-P. Colinge(Hewlett-Packard (United States))
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