Low-Temperature Si (111) Homoepitaxy and Doping Mediated by a Monolayer of Pb
O. D. Dubón(Harvard University), J. A. Golovchenko(Lexington City Schools), F. Spaepen(Harvard University), J. F. Chervinsky(Harvard University), Michael J. Aziz(Harvard University), Paul G. Evans(Harvard University)
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