Gate technology for 70 nm metal–oxide–semiconductor field-effect transistors with ultrathin (<2 nm) oxides
D. M. Tennant(University of Tennessee at Knoxville), P. J. Silvėrman, G. Timp(University of Notre Dame), F. Klemens(Brookhaven National Laboratory), J. M. Rosamilia, B. J. Sapjeta, A. Kornblit, T. Sorsch, N. Layadi, F. Baumann, B. E. Weir(AT&T (United States)), Thomas D. Boone
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
November 1, 1997
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