Static and nonequilibrium transient conductance at strong carrier freeze-out in a buried channel, metal-oxide-semiconductor transistor

Stuart K. Tewksbury, F. G. Storz, Tomas Lindström(ABB (Sweden)), M. R. Biazzo, D. M. Tennant(University of Tennessee at Knoxville), T. R. Harrison

Journal of Applied Physics

July 15, 1984

10.1063/1.333939

Cited by 11

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