Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures
A. Pépin(Centre National de la Recherche Scientifique), Y. I. Nissim, Matthias Schneider(Centre National de la Recherche Scientifique), H. Launois(Centre National de la Recherche Scientifique), C. Vieu(Centre National de la Recherche Scientifique)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
January 1, 1997
Cited by 67
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