Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane
Kris Baert(Ghent University), R. Mertens(IMEC), J. Nijs(IMEC), J. Poortmans(IMEC), W. Vandervorst(IMEC), Jan Vanhellemont(IMEC), J. Symons(IMEC), Matty Caymax(IMEC)
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