Direct solution of the diffraction pattern of a crystal with planar faulting
E. Estevez‐Rams(University of Havana), J. Martínez(University of Havana), A. Pentón-Madrigal(University of Havana), R. Lora‐Serrano(University of Havana)
Cited by 19
Abstract
A direct formalism for the solution of the diffraction pattern from the faulted layer crystal is derived. The proposed method is not specific for any crystal structure. The solution avoids the need for specific planar faulting models and has a direct physical meaning. The correlation distribution function between lateral displaced layers can be directly obtained from the diffracted intensities. The solution was compared successfully to a Monte Carlo trial and error method for the fcc structure. The developed formalism was used to determine the layer-layer correlation distribution function of the ${\mathrm{Gd}}_{2}{\mathrm{Co}}_{17}$ faulted layer structure.
Related Papers
No related papers found
Powered by citation graph analysis