Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

Jun Ge(Centre National de la Recherche Scientifique), Genshui Wang(Chinese Academy of Sciences), Feng Gao(Shanghai Jiao Tong University), J. Costecalde(Centre National de la Recherche Scientifique), Fei Cao(Amherst College), Ying Chen(Chinese Academy of Sciences), Xianlin Dong(Chinese Academy of Sciences), Denis Rémiens(Centre National de la Recherche Scientifique)
Applied Physics Letters
September 15, 2014
10.1063/1.4896156
Cited by 115

Related Papers

Novel BaTiO <sub>3</sub> -based lead-free ceramic capacitors featuring high energy storage density, high power density, and excellent stability
|Journal of Materials Chemistry C|2018|535
Antiferroelectrics for Energy Storage Applications: a Review
|Advanced Materials Technologies|2018|513
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
|Applied Physics Letters|2013|401
Novel Sodium Niobate-Based Lead-Free Ceramics as New Environment-Friendly Energy Storage Materials with High Energy Density, High Power Density, and Excellent Stability
|ACS Sustainable Chemistry & Engineering|2018|325
Energy‐Storage Properties of 0.89 <scp> Bi <sub>0.5</sub> Na <sub>0.5</sub> TiO <sub>3</sub> </scp> –0.06 <scp> BaTiO <sub>3</sub> </scp> –0.05 <scp> K <sub>0.5</sub> Na <sub>0.5</sub> NbO <sub>3</sub> </scp> Lead‐Free Anti‐ferroelectric Ceramics
|Journal of the American Ceramic Society|2011|300