Origin of EUV mask blank defects from ion beam deposition
He Yu(University of Electronic Science and Technology of China), Yong Jiang(University of Electronic Science and Technology of China), Patrick A. Kearney, V. K. Jindal(Panjab University), D. N. Ruzic(University of Illinois Urbana-Champaign), D. Andruczyk(University of Illinois Urbana-Champaign)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
March 15, 2012
Cited by 0
Related Papers
Designing band gap of graphene by B and N dopant atoms
|RSC Advances|2012|523
Sub-3 nm Co<sub>3</sub>O<sub>4</sub> Nanofilms with Enhanced Supercapacitor Properties
|ACS Nano|2015|263
Fully‐Depleted PdTe<sub>2</sub>/WSe<sub>2</sub> van der Waals Field Effect Transistor with High Light On/Off Ratio and Broadband Detection
|Advanced Functional Materials|2023|99
A multifunctional wearable E-textile <i>via</i> integrated nanowire-coated fabrics
|Journal of Materials Chemistry C|2020|94
Recent Progress in 2D Inorganic/Organic Charge Transfer Heterojunction Photodetectors
|Advanced Functional Materials|2022|92