Point defects in ZnO: an approach from first principles
Fumiyasu Oba(Kyoto University), Minseok Choi(Kyoto University), Atsushi Togo(Kyoto University), Isao Tanaka(Kyoto University)
Cited by 386Open Access
Abstract
-type doping, the compensation of carrier electrons by the native acceptor-type defects can be mostly suppressed when O-poor chemical potential conditions, i.e. low O partial pressure conditions, are chosen during crystal growth and/or doping.
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