Effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow

G. D. Wilk(Harvard University), J. A. Golovchenko(Lexington City Schools), F. Spaepen(Harvard University), J. F. Chervinsky(Harvard University)
Applied Physics Letters
May 12, 1997
Cited by 7


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