Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Jung Han(Sandia National Laboratories), Albert G. Baca(Sandia National Laboratories), R. J. Shul(Sandia National Laboratories), C. G. Willison(Sandia National Laboratories), L. Zhang(Sandia National Laboratories), F. Ren(University of Florida), A. P. Zhang(University of Florida), G. Dang(University of Florida), S. M. Donovan(University of Florida), X. A. Cao(University of Florida), H. Cho(University of Florida), K. B. Jung(University of Florida), C. R. Abernathy(University of Florida), S. J. Pearton(University of Florida), R. G. Wilson(Stevenson University)
Applied Physics Letters
May 3, 1999
10.1063/1.123942
Cited by 87Open Access
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Abstract

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic chemical vapor deposition on c-axis Al2O3. Secondary ion mass spectrometry measurements showed no increase in the O concentration (2–3×1018 cm−3) in the AlGaN emitter and fairly low levels of C (∼4–5×1017 cm−3) throughout the structure. Due to the nonohmic behavior of the base contact at room temperature, the current gain of large area (∼90 μm diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the Mg acceptors in the base, and current gains of ∼10 were obtained at 300 °C.

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