High <i>p</i>-type doping of ZnSe using Li3N diffusion
S.W. Lim(Tokyo Institute of Technology), Hiroshi Kukimoto(Tokyo Institute of Technology), Fumio Koyama(Furukawa Electric (Japan)), Kenichi Iga(Tokyo Institute of Technology), Katsunori Yanashima(Sony (Taiwan)), T. Honda(Tokyo Institute of Technology), H. Munekata(IBM (United States)), Kazuya Inoué(Osaka University of Pharmaceutical Sciences)
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