Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Masaru Kuramoto(NEC (Japan)), M. Mizuta(NEC (Japan)), Akira Usui(Kōchi University), Chiaki Sasaoka(NEC (Japan)), Atsushi Yamaguchi(NEC (Japan)), A. Kimura(Hiroshima University), Haruo Sunakawa(NEC (Japan)), Y. Hisanaga(NEC (Japan)), M. Nido(NEC (Japan)), Naotaka Kuroda(NEC (Japan))

physica status solidi (a)

November 1, 1999

10.1002/(sici)1521-396x(199911)176:1<35::aid-pssa35>3.0.co;2-2

Cited by 3

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