High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

Chiaki Sasaoka(NEC (Japan)), Akira Sakai(NEC (Japan)), Akira Usui(Kōchi University), A. Kimura(Hiroshima University), Haruo Sunakawa(NEC (Japan)), M. Nido(NEC (Japan))

Journal of Crystal Growth

June 1, 1998

10.1016/s0022-0248(98)00169-9

Cited by 82

Related Papers

Successful Efavirenz Dose Reduction in HIV Type 1-Infected Individuals with Cytochrome P450 2B6 *6 and *26

|Clinical Infectious Diseases|2007|222

Valence band hybridization in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>-rich<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>alloys

|Physical Review B|2004|94

Assessment of microchimerism in rat liver transplantation by polymerase chain reaction

|Hepatology|1996|43

Reflectance spectroscopy on GaN films under uniaxial stress

|Applied Physics Letters|1997|34

Ge1−Sn stressors for strained-Ge CMOS

|Solid-State Electronics|2011|34