A Physically Transient Form of Silicon Electronics

Suk‐Won Hwang(University of Illinois Urbana-Champaign), Hu Tao(Tufts University), Dae‐Hyeong Kim(Institute for Basic Science), Huanyu Cheng(Northwestern University), Jun-Kyul Song(University of Illinois Urbana-Champaign), Elliott Rill(University of Illinois Urbana-Champaign), Mark A. Brenckle(Tufts University), Bruce Panilaitis(Tufts University), Sang Min Won(University of Illinois Urbana-Champaign), Yun‐Soung Kim(University of Illinois Urbana-Champaign), Young Min Song(University of Illinois Urbana-Champaign), Ki Jun Yu(University of Illinois Urbana-Champaign), Abid Ameen(University of Illinois Urbana-Champaign), Rui Li(Northwestern University), Yewang Su(Northwestern University), Miaomiao Yang(Tufts University), David L. Kaplan(Tufts University), M. R. Zakin(Nano Terra (United States)), Marvin J. Slepian(University of Arizona), Yonggang Huang(Northwestern University), Fiorenzo G. Omenetto(Tufts University), John A. Rogers(University of Illinois Urbana-Champaign)
Science
September 28, 2012
Cited by 1,259Open Access
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Abstract

A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.


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