Normal Displacements on a Reconstructed Silicon (111) Surface: An X-Ray-Standing-Wave Study
J. R. Patel, Guo -Xin Qian(AT&T (United States)), P. E. Freeland(AT&T (United States)), J. A. Golovchenko(Lexington City Schools), D. J. Chadi(AT&T (United States)), A. R. Kortan(AT&T (United States))
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