Single electron switching events in nanometer-scale Si MOSFET's
Richard Howard(Samsung (United States)), K. S. Ralls, W. J. Skocpol(TKL Research), D. M. Tennant(University of Tennessee at Knoxville), P. M. Mankiewich(AT&T (United States)), L. D. Jackel, Linus A. Fetter, R. W. Epworth
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