A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung‐Jae Lee(Samsung (South Korea)), Chang Bum Lee(Samsung (South Korea)), Dongsoo Lee(Samsung (South Korea)), Seung Ryul Lee(Samsung (South Korea)), Man Chang(Samsung (South Korea)), Ji Hyun Hur(Samsung (South Korea)), Young‐Bae Kim(Samsung (South Korea)), Changjung Kim(Samsung (South Korea)), David H. Seo(Samsung (South Korea)), Sunae Seo(Sejong University), U‐In Chung(Samsung (South Korea)), In-Kyeong Yoo(Samsung (South Korea)), Kinam Kim(Samsung (South Korea))
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