U‐In Chung

A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode. The substrate contains an array of microscale pyramidal features, and the electrode comprises a polymer composite. When the pressure-induced geometrical change experienced by the electrode is maximized at 40% elongation, a sensitivity of 10.3 kPa(-1) is achieved.

Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.

Simple binary-TMO (transition metal oxide) resistive random access memory named as OxRRAM has been fully integrated with 0.18/spl mu/m CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300/spl deg/C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2/spl mu/m/sup 2/.