Depth profiles of a shallow implanted layer in a Si wafer determined by different methods of thin-layer analysis
R. Klockenkämper(Leibniz Institute for Analytical Sciences - ISAS), Alex von Bohlen(Leibniz Institute for Analytical Sciences - ISAS), Holger Jenett(Leibniz Institute for Analytical Sciences - ISAS), H. Bubert(Leibniz Institute for Analytical Sciences - ISAS), Harry Becker(Ruhr University Bochum)
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