Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. <b>75</b>, 2954 (1999)]
Paul G. Evans(Harvard University), J. A. Golovchenko(Lexington City Schools), F. Spaepen(Harvard University), J. F. Chervinsky(Harvard University), O. D. Dubón(Harvard University)
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