Dislocation propagation in GaN films formed by epitaxial lateral overgrowth

Akira Sakai(NEC (Japan)), Akira Usui(Kōchi University), Hironori Sunakawa(NEC (Japan)), A. Kimura(Hiroshima University)

Journal of Electron Microscopy

January 1, 2000

10.1093/oxfordjournals.jmicro.a023812

Cited by 14

Related Papers

Successful Efavirenz Dose Reduction in HIV Type 1-Infected Individuals with Cytochrome P450 2B6 *6 and *26

|Clinical Infectious Diseases|2007|222

Valence band hybridization in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>-rich<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>alloys

|Physical Review B|2004|94

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

|Journal of Crystal Growth|1998|82

Assessment of microchimerism in rat liver transplantation by polymerase chain reaction

|Hepatology|1996|43

Reflectance spectroscopy on GaN films under uniaxial stress

|Applied Physics Letters|1997|34