Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection x-ray fluorescence analysis after repeated stratified etching and by rutherford backscattering spectrometry

R. Klockenkämper(Leibniz Institute for Analytical Sciences - ISAS), L. Palmetshofer(Johannes Kepler University of Linz), Alex von Bohlen(Leibniz Institute for Analytical Sciences - ISAS), Harry Becker(Ruhr University Bochum)
Surface and Interface Analysis
November 1, 1999
10.1002/(sici)1096-9918(199911)27:11<1003::aid-sia668>3.0.co;2-y
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