Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasers
J. Shimizu(NEC (Japan)), Akira Suzuki(NEC (Japan)), S. Murata(NEC (Japan)), Akihisa Tomita(NEC (Japan)), A. Kimura(Hiroshima University), K. Naniwae(NEC (Japan)), M. Nido(NEC (Japan))
Cited by 1
Related Papers
Successful Efavirenz Dose Reduction in HIV Type 1-Infected Individuals with Cytochrome P450 2B6 *6 and *26
|Clinical Infectious Diseases|2007|222
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
|Journal of Crystal Growth|1998|82
Assessment of microchimerism in rat liver transplantation by polymerase chain reaction
|Hepatology|1996|43
Reflectance spectroscopy on GaN films under uniaxial stress
|Applied Physics Letters|1997|34